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dynamic Secondary Ion Mass Spectrometry (d-SIMS)

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The sequential detection of masses simultaneously generated makes the technique best suited for depth-profiling. The most important feature is in fact its ability to follow elemental depth distributions with very low detection limits and with high lateral resolution.

Cameca Wf SC Ultra
Cameca Dynamic-SIMS instrument equipped with low-impact energy - mass filtered - O2 and Cs beams, magnetic sector mass spectrometer (energy filtered), electron beam for charge compensation, rotating sample holder and laser interferometer for continuous monitoring of the sputtering rate. The overall design of this instrument minimises ion beam induced effects (such as mixing and roughness development) during depth profiling, allowing to reach depth resolutions in the range of 0.8 nm/decade. Special expertise has being developed in ultra-shallow junctions and ultra-thin film characterization.

 

d-SIMS

Cameca SC-Ultra (installed 2001)

Ion sources

Oxygen and cesium

Impact energy

0.2÷15keV

Analyzer

Magnetic Sector

Min depth resolution

1.5nm
1÷20nm is typically obtainable

Mass resolution δM / M

up to 20.000

Mass range

> 500 amu at 5 kV sec. ext. Volt.

Spatial resolution

1µm

Charge compensation

an electron gun is provided

Det. limit (deep profile)

B, P and As < 1015 at/cm3

Det. limit (shallow profile)

B, P and As < 1016 at/cm3