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Wafer-through doped structures

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Vertical diodes are fabricated by selectively doping wafer through DRIE etched vias. Polysilicon via filling is available in order to obtain a planar surface for further processing. Double side processing includes two metal layers on each side.

- High purity substrate (FZ)
- Double side processing
- Up to two metal levels per side
- Wafer through DRIE
- Selective n-p column doping
- Doped trenches for active edge

Application cases: 
ATLAS Cern IBL
Market area: 
Research