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Ultra-low leakage planar devices
Pixel and microstrip detectors are realized on ultrapure silicon, processing both wafer sides with hegh yield. 3D processing can be integrated to fabricate active edge devices with wafer-through doped features (trenches, hole grids). We have a wide experience on particle detection in collaboration with CERN, INFN and Trento University.
- High purity substrate (FZ)
- Double side processing
- Microstrip: AC&DC coupling
- BIAS: resistors or punch-through
- Pixel: p-on-n, n-on-n and n-on-p